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 Variable Capacitance Diodes
MA2Z368
Silicon epitaxial planar type
Unit : mm
For UHF and SHF electronic tuners I Features
* Large capacitance ratio * Small series resistance rD * S-mini type package, allowing downsizing of equipment and automatic insertion through the taping package and magazine package
INDICATES CATHODE
0.4 0.15
1
2
0.4 0.15
1.7 0.1 2.5 0.2
Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Junction temperature Storage temperature
Symbol VR VRM IF Tj Tstg
Rating 32 34 20 150 -55 to +150
Unit V V mA C C
0.9 0.1
I Absolute Maximum Ratings Ta = 25C
0 to 0.05
1 : Anode 2 : Cathode S-Mini Type Package (2-pin)
Marking Symbol: 6L
I Electrical Characteristics Ta = 25C
Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(30V) Capacitance ratio Series resistance* CD(1V)/CD(30V) rD VR = 4.5 pF, f = 470 MHz VR = 30 V VR = 1 V, f = 1 MHz VR = 30 V, f = 1 MHz 3.6 0.5 4 2 4.6 0.65 Conditions Min Typ Max 50 5.6 0.9 Unit nA pF pF
Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0.16 - 0.06
+ 0.1
0.3 - 0.05
+ 0.1
1.25 0.1
1
MA2Z368
CD VR
10 f = 1 MHz Ta = 25C 120
Variable Capacitance Diodes
IF V F
1.03 f = 1 MHz VR = 1 V 1.02 30 V
CD Ta
5
100
Diode capacitance CD (pF)
3 2
Forward current IF (mA)
1
60
25C
CD(Ta) CD(Ta = 25C)
- 40C 1.0 1.2
80
Ta = 60C
1.01
1.00
0.5 0.3 0.2
40
0.99
20
0.98
0.1
0
4
8 12 16 20 24 28 32 36 40
0
0
0.2
0.4
0.6
0.8
0.97
0
20
40
60
80
100
Reverse voltage VR (V)
Forward voltage VF (V)
Ambient temperature Ta (C)
IR Ta
100 VR = 33 V
Reverse current IR (nA)
10
1
0.1
0.01
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (C)
2


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